Part number : G80N60

Functions : Ultrafast IGBT ( Vces = 600V )

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

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Functions :

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Features

1. High speed switching

2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A

3. High input impedance

4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Absolute maximum ratings ( Tc=25°C )

1. Collector-Emitter Voltage : Vces = 600 V

2. Gate-Emitter Voltage : Vceo = ± 20 V

3. Emitter to Base Voltage : Vebo = 80 A

4. Maximum Power Dissipation : Pd = 195 W

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C

 

Applications

: AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G80N60 Datasheet PDF Download

 

Other data sheets within the file :  G80N60UFD, SGH80N60UFD