Part number : RJP30E2
Function: 360V, N Channel IGBT, High Speed Power Switching
Package : TO-220FL Type
Manufacturer: Renesas Semiconductor
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Description
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max
Pinout

Absolute Maximum Ratings
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 25 W
Other Part Number : RJP30E2DPK-M0, RJP30E3DPK-M0, RJP30E2DPP-M0, RJP30E3DPP-M0


