K40T120 – IGBT, 1200V, 40A, IKW40T120

K40T120 Datasheet PDF learn more.

Part number : IKW40T120, K40T120

Functions : IGBT, 1200V, 40A

Package information : TO-247 Type

Manufacturer : Infineon

Image :

K40T120 datasheet igbt

The texts in the PDF file :


Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode


1. Best in class TO247

2. Short circuit withstand time – 10 μs

3. Designed for :
– Frequency Converters
– Uninterrupted Power Supply

4. TrenchStop and Fieldstop technology for 1200 V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior

5. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

6. Low EMI

7. Low Gate Charge

8. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

9. Qualified according to JEDEC1 for target applications

10. Pb-free lead plating; RoHS compliant


K40T120 PDF File

K40T120 pdf

20N60A4D – HGTG20N60A4D, 600V, IGBT

Part number : HGTG20N60A4D, 20N60A4D

Functions : 600V, SMPS Series N-Channel IGBT

Package : TO-247 Type

Manufacturer : Fairchild Semiconductor

Image and pinouts :

20N60A4D pinout


The texts in the PDF file :

The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.

Formerly Developmental Type TA49341.


1. >100kHz Operation At 390V, 20A

2. 200kHz Operation At 390V, 12A

3. 600V Switching SOA Capability

4. Low Conduction Loss

5. Typical Fall Time : 55ns at Tj – 125°C


20N60A4D PDF File

20N60A4D pdf