Part number : K25N120

Functions : 1200V, 25A, Fast IGBT in NPT-technology

Package: TO-247AC Type

Manufacturer: Infineon Technologies

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SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 40lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for: – Motor controls – Inverter G – SMPS

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120

Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55…+150 260 °C 2 C E PG-TO-247-3 VCE 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking K25N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 46 25 Unit V A ICpuls IF 84 84 42 25 IFpuls VGE tSC Ptot 80 ±20 10 313 V µs W VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_2 Sep 08 Power Semiconductors SKW25N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE=0V, I C =1 500 µ A VCE(sat) V G E = 15 V, I C =25A [ … ]

K25N120 PDF File