RJP63K2 IGBT is a semiconductor device used in high-voltage and high-current applications.
Part number : RJP63K2DPK-M0
Functions : 630V, 35A, Silicon N Channel IGBT
Package: TO-220FL Type
Manufacturer: Renesas Electronics
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Description
RJP63K2 perform switching operations through voltage control and current sensing, and have low voltage drop and small losses for highly efficient power conversion. This enables efficient energy conversion in high-voltage power electronics.
N-Channel IGBTs are primarily used in a variety of applications, including high-voltage power conversion, inverters, uninterruptible power supplies (UPS), motor control, and energy management systems. This device can be selected to improve stability and performance in applications handling high voltage and high current.
Functions
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 μA max
5. Isolated package TO-220FL
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter voltage : Vces = 630 V
2. Gate to Emitter voltage : Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
RJP63K2 Datasheet PDF
Other data sheets within the file : RJP63K2DPP-M0
