IGBT

G40N60 PDF – 600V, Ultra-Fast IGBT (Transistor)

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G40N60 is an N-channel MOSFET (long-channel Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor. This MOSFET is a power device used in high voltage (600V) and high current (40A) applications.

Part number : SGH40N60, FGA40N60

Functions : 600V, 40A, Ultra-Fast IGBT

Package: TO-247 Type

Manufacturer: Fairchild Semiconductor

Image :
G40N60 datasheet mosfet

Description

G40N60 has fast switching speeds and excellent low-voltage drop characteristics, making it suitable for high-efficiency power conversion and switching circuits. This helps minimize power loss and achieve high power efficiency.

Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Pinout

G40N60 Datasheet PDF

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Applications

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Other data sheets within the file : SGH40N60UFD

G40N60 Datasheet PDF

G40N60 pdf

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RJP4584 IGBT Transistor – 450V, 35A – Hitachi

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RJP4584 is a N-Channel IGBT used in high voltage and high current applications.

Part number : RJP4584DPP-90-T2

Manufacturer: Hitachi, Renesas

Functions : High Speed Power Switching IGBT (35A, 450V)

Package information : TO-220 Type

Image :
RJP4584 pinout datasheet

Description

RJP4584 is a device that combines the features of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and BJT (Bipolar Junction Transistor), and is designed for high-speed switching and high-efficiency power conversion.

N-Channel IGBT is composed of a combination of N-channel MOSFET and PNP BJT. The operation of the BJT is controlled by the gate-source voltage of the MOSFET, enabling high voltage tolerance to high voltages and high-efficiency power conversion.

N-Channel IGBTs perform switching operations through voltage control and current sensing, and have low voltage drop and small losses for highly efficient power conversion. This enables efficient energy conversion in high-voltage power electronics.

Features

1. Low collector to emitter saturation voltage

2. Gate to emitter voltage rating 30 V

3. Pb-free lead plating and chip bonding

 

Pinout


1. RJP4584

(1) Collector to emitter voltage VCES — 450v

(2) Collector current IC —— 35A

2. RJP6065

(1) Collector to emitter voltage VCES — 630v

(2) Collector current IC —— 40A

(3) Collector peak current ic(peak) Note1— 100A

Applications

This is used in a variety of applications including high-voltage power conversion, inverters, uninterruptible power supplies (UPS), motor control, and energy management systems.

RJP4584 Datasheet PDF

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