G80N60UFD is a component known as IGBT (Insulated Gate Bipolar Transistor). This part has the ability to handle high voltage of 600V and high current of 80A.

Part number : SGH80N60UFD

Functions : Ultrafast IGBT ( Vces = 600V, 80A )

Package: TO-3PN Type

Manufacturer: Fairchild Semiconductor ( Onsemi.com )

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Description

G80N60UFD is mainly used in high-voltage and high-current applications, and can be utilized in a variety of fields such as inverters, power supplies, and motor control.

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

 

Pinouts

Features

1. High speed switching

2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A

3. High input impedance

4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage : Vces = 600 V

2. Gate to Emitter Voltage : VGes = ± 20 V

3. Collector Current : Ic = 80 A

4. Drain power dissipation : PD = 195 W

5. Operating Junction Temperature : Tch = -55 to +150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications

1. AC & DC motor controls, general purpose inverters

2. Robotics, and servo controls.

 

Other data sheets within the file :  G80N60, SGH80N60UFD

 

G80N60UFD Datasheet PDF Download