RJP63K2 PDF Download

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RJP63K2DPP-MZ#T2

DISCTRETE / POWER TRANSISTOR / Bipolar (BJT) Transistor

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Description

This is 630V / 35A / N-Channel IGBT( RJP63K2DPP-M0 ). • Trench gate and thin wafer technology (G6H-II series) • Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ • High speed switching: tr = 60 ns typ, tf = 200 ns typ..

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