Part number : RJP63K2
Functions : Silicon N Channel IGBT High Speed Power Switching
Manufacturer : Renesas Electronics
Pinout :
Functions :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 A max
5. Isolated package TO-220FL
RJP63K2 Datasheet PDF
Other data sheets within the file : RJP63K2DPP-M0
