Part number : RJP63K2
Functions : 630V, 35A, Silicon N Channel IGBT
Package : TO-220FL Type
Manufacturer : Renesas Electronics
Pinout :
Functions :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 μA max
5. Isolated package TO-220FL
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter voltage : Vces = 630 V
2. Gate to Emitter voltage : Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
High Speed Power Switching
RJP63K2 Datasheet PDF
Other data sheets within the file : RJP63K2DPP-M0
