RJP63K2 PDF – 630V, 35A, IGBT – Renesas

Part number : RJP63K2

Functions : 630V, 35A, Silicon N Channel IGBT

Package : TO-220FL Type

Manufacturer : Renesas Electronics

Pinout :

RJP63K2 datasheet

 

Functions :

1.  Trench gate and thin wafer technology (G6H-II series)
2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4.  Low leak current: ICES= 1 μA max
5.  Isolated package TO-220FL

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage : Vces = 630 V
2. Gate to Emitter voltage : Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

Applications :

High Speed Power Switching

 

RJP63K2 Datasheet PDF

RJP63K2DPP-M0 pdf


Other data sheets within the file : RJP63K2DPP-M0