Information about the semiconductor 2SD1975 manufactured by Panasonic Semiconductor can be found here.
Function: Silicon NPN Transistor
Package: TOP-3L Type
Manufacturers: Panasonic Semiconductor
Image
Description
2SD1975 Transistor is 180V, 15A, Silicon NPN triple diffusion planar type.
Preview 1
Some text files in the PDF file
Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings 180 200 180 200 5 25 15 150 3.5 150 –55 to +150 Unit V 26.0±0.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 emitter voltage 2SD1975A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1 2 3 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package s
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current 2SD1975 2SD1975A (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 10A, IB = 1A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 200 20 60 20 1.8 2.5 V V MHz pF 200 min typ max 50 50 50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC — Ta 200 24 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=1000mA 2SD1975, 2SD1975A IC — VCE 24 VCE=5V 20 IC — VBE Collector power dissipation PC (W) 20 Collector current IC (A) 150 16 Collector current IC (A) (1) 800mA 700mA 600mA 500mA 400mA 300mA 200mA 16 TC=–25˚C 25˚C 100˚C 100 12 12 8 100mA 8 50 4 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 4 0 0 1 2 3 4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 1000 hFE — IC VCE=5V 1000 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 3 300 TC=100˚C 2 [ … ]
Preview 2
2SD1975 PDF Datasheet
Information related to components
Transistor 2SD1975 - - Panasonic  |
| Transistor 2SD1975 - Silicon PNP triple diffusion planar type(For high power amplification) - Panasonic |
| Transistor 2SD1970 Silicon NPN Epitaxial - Hitachi Learn More |  |