transistor

J6810 Transistor – FJAF6810, NPN, Fairchild

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The J6810 Transistor  learn more.

Part Number: FJAF6810

Functions: NPN Triple Diffused Planar Silicon Transistor

Package: TO-3PF Type

Manufacturer: Fairchild Semiconductor

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j6810 transistor equivalent

Description

The J6810 is a high-voltage NPN power transistor. It is commonly used in various electronic circuits where high-power amplification or switching is required.

This transistor is capable of handling high voltages and currents, making it suitable for applications such as power amplifiers, motor control, switching regulators, and other high-power circuits.

The J6810 is a high-voltage NPN bipolar junction transistor specifically engineered for horizontal deflection output stages in CRT-based color display systems. It is optimized for high-speed switching and high-voltage endurance, making it suitable for flyback-driven circuits where both large voltage swings and fast transitions are required.

Features

• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1μs
• For Color Monitor

Pinouts

J6810 pinout

Absolute Maximum Ratings (Tc = 25°C)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 1500 V
Collector-Emitter Voltage VCEO 750 V
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 10 A
Collector Current (Pulse) ICP 20 A
Power Dissipation PC 60 W
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -55 to 150 °C

Design Notes

  • Primarily used in flyback-based horizontal deflection stages where high voltage spikes occur
  • Requires proper snubber or damper network to control voltage overshoot and ringing
  • Fast fall time (tf) is critical for minimizing switching losses in high-frequency deflection circuits
  • Ensure adequate base drive to achieve deep saturation and reduce conduction losses
  • Thermal design must consider repetitive pulse stress rather than only DC dissipation

Typical Circuit Usage

  • CRT horizontal deflection output stage
  • Flyback transformer driver
  • High-voltage pulse switching circuits
  • Line output stage in television receivers

How to Choose This Part

  • Use when high voltage (>1kV transient) capability is required
  • Suitable for legacy CRT and high-voltage pulse applications
  • Prefer when fast switching and high pulse current are critical
  • Evaluate SOA under pulsed conditions rather than DC-only specs
  • Consider modern MOSFET/IGBT alternatives for new designs

Applications

  • Color CRT monitors and televisions
  • High-voltage switching circuits
  • Flyback converters (specialized cases)
  • Industrial display systems

Alternative / Equivalent Products

  • 2SC5905
  • BU508A
  • 2SC3998
  • BU2520AF
  • D1555 (2SD1555)

J6810 PDF Datasheet File

J6810 datasheet pdf
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FJAF6810 PDF Datasheet File

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C4804 Datasheet – 600V, 3A, NPN Transistor

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Part number: 2SC4804

Functions: 600V, 3A, Silicon NPN Power Transistor

Package: ITO-220 Type

Manufacturer: SavantIC

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C4804 datasheet pdf

Description

C4804 transistor is a high-voltage, silicon NPN power transistor housed in an ITO-220 package.

 

Key Features

  • ITO-220 package for compact thermal handling
  • High breakdown voltages up to 900V
  • Suitable for fast switching and high-voltage conversion

 

Pin Configuration

transistor C4804 pinout

Pin Function
1 Base
2 Collector
3 Emitter

Absolute Maximum Ratings (Ta = 25°C)

Parameter Symbol Conditions Value Unit
Collector-Base Voltage VCBO Open emitter 900 V
Collector-Emitter Voltage VCEO Open base 600 V
Emitter-Base Voltage VEBO Open collector 7 V
Collector Current (DC) IC – 3 A
Collector Current (Peak) ICM – 5 A
Base Current IB – 1 A
Total Power Dissipation (Tc=25°C) PT – 30 W
Junction Temperature Tj – 150 °C
Storage Temperature Tstg – -55 to +150 °C

Electrical Characteristics (Tj = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 600 – – V
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 900 – – V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 7 – – V
Collector-Emitter Saturation Voltage VCEsat IC = 0.8A, IB = 0.16A – – 0.6 V
Base-Emitter Saturation Voltage VBEsat IC = 0.8A, IB = 0.16A – – 1.2 V
Collector Cut-off Current ICBO VCB = 800V, IE = 0 – – 0.1 mA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 – – 0.1 mA
DC Current Gain hFE IC = 0.8A, VCE = 5V 10 – – –

 

Applications

  • High-speed DC-DC converters
  • Switching regulators
  • High-voltage switching applications

 

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C4804 PDF File

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