Transistor BFG19 Datasheet PDF learn more.
Functions: 12V, 100mA, NPN Silicon RF Transistor.
Package information: SOT-223 type
Manufacturer: Infineon Technologies AG
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Description
The BFG19 is a high-frequency NPN silicon RF transistor designed for low-noise, low-distortion broadband amplification in telecommunication systems up to 1.5GHz, available in a compact SOT-223 package. It features high transition frequency (fT ≈ 7.5GHz), low noise figure, and stable operation across a wide collector current range from 20mA to 80mA. This device is commonly used in RF front-end circuits, antenna amplifiers, and power stages in DECT and PCN communication systems.
Features
- NPN silicon RF transistor for high-frequency applications
- High transition frequency (fT ≈ 7.5GHz)
- Low noise figure (~1.5dB typical)
- Designed for broadband amplification up to 1.5GHz
- Suitable for low distortion RF amplification
- Compact SOT-223 package
- Optimized for operation at collector currents of 20mA to 80mA
- ESD sensitive device requiring careful handling
Pinout
Absolute Maximum Ratings (Tc = 25 °C)
| Parameter | Symbol | Value | Unit |
| Collector-Emitter Voltage | VCEO | 12 | V |
| Collector-Emitter Voltage (Saturation) | VCES | 20 | V |
| Collector-Base Voltage | VCBO | 20 | V |
| Emitter-Base Voltage | VEBO | 2 | V |
| Collector Current | IC | 100 | mA |
| Base Current | IB | 12 | mA |
| Power Dissipation (TS ≤ 90°C) | Ptot | 800 | mW |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -65 to +150 | °C |
Design Notes
- Biasing at optimal collector current (20–80mA) ensures best noise and gain performance
- RF layout must minimize parasitic inductance and capacitance for GHz operation
- Impedance matching networks are essential for maximum power transfer
- Thermal design should consider junction-to-ambient resistance for stability
- ESD precautions are critical during handling and assembly
Typical Circuit Usage
- Low-noise amplifiers (LNA) for RF front-end
- Broadband antenna amplifiers
- RF driver stages in communication systems
- Power amplifiers for DECT and PCN applications
- Signal amplification in wireless receivers
How to Choose This Part
- Select for RF applications up to 1.5GHz requiring low noise
- Suitable when high gain and high fT are needed
- Choose for compact SMD RF designs
- Ideal for moderate power RF amplification stages
- Appropriate for telecom and wireless front-end circuits
Applications
- Wireless communication systems
- DECT and PCN base stations
- RF signal amplification modules
- Antenna front-end circuits
- Broadband RF amplification systems
Alternative / Equivalent Products
- BFG196 RF transistor (same family variant)
- BFR93A high-frequency NPN transistor
- BFQ34 RF transistor
- 2SC3355 RF amplifier transistor
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BFG19 PDF File
