K3995 – 200V, 30A, N-ch, MOSFET (Transistor)

This is a kind of transistor, K3995 Datasheet PDF learn more.

Part number : K3995

Functions : Silicon N-channel MOSFET ( 200V )

Package information : TO-220C-G1 Type

Manufacturer: Panasonic

Image :

K3995 transistor mosfet

The texts in the PDF file :

This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP

Pin arrangement :

K3995 pinout datasheet

Features

 Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive  Package  Code TO-220C-G1

 Marking Symbol: K3995

 Pin Name 1. Gate 2. Drain 3. Source

Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current *1 IDRP Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature EAS PD Tj TC = 25°C Ta = 25°C *3 Tstg  Electrical Characteristics TC = 25°C±3°C Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage ce /D isc Parameter on tin Symbol VDSS IDSS IGSS Vth ue Note) *1: PW ≤ 10 ms, Duty ≤ 1.0% *2: Avalanche energy capability guaranteed *3: Without heat sink di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 200 30 30 V V ±30 120 120 801 50 1.4 A A A A M Di ain sc te on na tin nc ue e/ d 

 

Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit mJ W W 150 °C °C -55 to +150 Conditions Min 200 ID = 1 mA, VGS = 0  Internal Connection D G S Typ Max 10 Unit V mA mA V mW S pF pF pF ns ns ns ns en an VDS = 160 V, VGS = 0 int VGS = ±30 V, VDS = 0 ±1.0 4.5 52 Drain-source ON resistance Ma VDS = 10 V, ID = 1.0 mA VGS = 10 V, ID = 15.0 A 2.5 12 RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf 43 22 Forward transfer conductance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse t [ … ]

K3995 PDF File

K3995 datasheets

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FGD4536 Datasheet – 360V, IGBT, TO-252 (Transistor)

This is a kind of IGBT. FGD4536 Datasheet PDF learn more.

Part number : FGD4536

Functions : 360 V PDP Trench IGBT.

Package information : TO-252, D-PAK Type

Manufacturer: Fairchild Semiconductor

Image :

The texts in the PDF file :

360V, PDP Trench IGBT

Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential.

 

Features

• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant

[ … ]

Pinout ( Pin arrangement )

Applications

• PDP TV, Consumer Appliances

 

FGD4536 Datasheet Transistor IGBT File

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