11N80C3 Datasheet – 800V, MOSFET (Transistor)

This is a kind of transistor.

Part number : 11N80C3, SPP11N80C3

Functions : 800V, CoolMOS Power Transistor

Package information : TO-220-3 Pin Type

Manufactures : Infineon

Image

11N80C3 datasheet mosfet

Description :

800V, CoolMOS Power Transistor

Features

• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances

[ … ]

Absolute Maximum Ratings (Ta = 25°C)

1. Continuous drain current : Id = 11 A
2. Pulsed drain current : Id = 33 A
3. Avalanche energy, single pulse : Eas = 470 mJ
4. Avalanche energy, repetitive t AR : Ear = 0.2 mJ
5. Gate source voltage : Vgs = ± 20 V

Pinout

CoolMOSTM 800V designed for:

• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)

11N80C3 Transistor File

7N60 MOSFET – 600V, 7.4A, Transistor

This is a kind of the MOSFET.

Part number : 7N60

Functions : 600V, 7.4A, MOSFET ( Transistor )

Package : TO-220C Type

Manufacturer : UTC, ISC

Image and pinout

 

The texts in the PDF file :

Designed for high efficiency switch mode power supply.

 

Features

1. Drain Current –ID= 7.4A@ TC=25℃
2. Drain Source Voltage- : VDSS= 600V(Min)
3. Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
4. Avalanche Energy Specified
5. Fast Switching ·Simple Drive Requirements
6. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Absolute Maximum Ratings (Ta = 25°C)

1. VDSS Drain-Source Voltage = 600 V
2. VGS Gate-Source Voltage-Continuous = ±30 V
3. ID Drain Current-Continuous = 7.4 A
4. IDM Drain Current-Single Plused = 29.6 A
5. PD Total Dissipation (@TC=25℃) = 142 W
6. Tj Max. Operating Junction Temperature = 150 ℃
7. Tstg Storage Temperature = -55~150 ℃

[ … ]

7N60 Datasheet PDF File

4407A