transistor Archives - Page 27 of 88

This is PNP Transistor.

Part number : B778, 2SB778

Functions : (-)120V, PNP Transistor

Package: TO-3P Type

Manufacturer: Wing Shing Computer

Image :

The texts in the PDF file :

2SB778

1. High Current Capability

2. High Power Dissipation

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Base Voltage : Vcbo = – 120 V
2. Collector-Emitter Voltage : Vceo = -120 V
3. Emitter-Base voltage : Vebo = -6 V
4. Collector Current (DC) : Ic = – 10 A
5. Collector Dissipation : Pc = 80 W
6. Junction Temperature : Tj = 150 ℃
7. Storage Temperature : Tsg = -55 ~ 150 ℃

ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current *DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Test Condition IC=-5 mA IE=0 IC=-10 mA RBE=∞ IE=-5mA IC=0 VCB=-60V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-5V IC=-2A IC=-3A IB=-0.3A Min -120 -120 -6 Typ Max Unit V V V mA mA 55 120 -0.1 -0.1 160 -1.5 V Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] [ … ]

Applications

1. AUDIO POWER AMPLIFIER
2. DC TO DC CONVERTER

B778 PDF File

This is transistor. Silicon N-channel MOSFET.

Part number : K5A50D, K5A500, TK5A50D, TK5A500

Functions : 500V, 5A, MOSFET ( Transistor )

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Image :

K5A50D mosfet transistor

The texts in the PDF file :

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Applications

Switching Regulator

Features

• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit Internal Connection 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensi [ … ]

Pinout

K5A50D pinout datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Drain power dissipation : PD = 35 W
5. Single pulse avalanche energy : Eas = 150 mJ
6. Avalanche current : Iar = 5 A
7. Repetitive avalanche energy : Ear = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

transistor

B778 – (-120V), PNP Transistor – 2SB778

B778 PDF File

K5A50D – 500V, N-ch MOSFET (Transistor) – Toshiba

K5A50D Transistor PDF File