K5A50D – 500V, N-ch MOSFET (Transistor) – Toshiba

This is transistor. Silicon N-channel MOSFET.

Part number : K5A50D, K5A500, TK5A50D, TK5A500

Functions : 500V, 5A, MOSFET ( Transistor )

Package : TO-220 Type

Manufacturer : Toshiba Semiconductor

Image :

K5A50D mosfet transistor

The texts in the PDF file :

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Applications

Switching Regulator

Features

• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit Internal Connection 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensi [ … ]

Pinout

K5A50D pinout datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Drain power dissipation : PD = 35 W
5. Single pulse avalanche energy : Eas = 150 mJ
6. Avalanche curren : Iar = 5 A
7. Repetitive avalanche energy : Ear = 3.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

 

K5A50D Transistor PDF File