D669A transistor learn more.
Part number : 2SD669A
Functions : NPN Epitaxial Silicon Transistor
Package information : TO-126MOD Package
Manufacturer : Hitachi
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Description
D669A transistor typically has a maximum collector-base voltage (Vcbo) of 180V, a maximum collector-emitter voltage (Vceo) of 160V, and a maximum emitter-base voltage (Vebo) of 5V. The maximum collector current (Ic) is 1.5A.
The 2SD669A transistor is an NPN (Negative-Positive-Negative) type transistor commonly used in various electronic applications. It is designed to handle medium to high voltage and current levels.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to base voltage : VCBO = 180 V
2. Collector to emitter voltage : VCEO = 160 V
3. Emitter to base voltage : VEBO 5 V
4. Collector current IC : 1.5 A
5. Collector peak current : IC(peak) = 3 A
6. Collector power dissipation : PC 1 W
7. Junction temperature : Tj = 150 °C
8. Storage temperature : Tstg = –55 to +150 °C
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Pinout
Applications
1. Low frequency power amplifier complementary pair with 2SB649/A