2SC5200 – NPN Transistor, 230V, 15A – Toshiba

2SC5200 is an NPN (BJT) type high-voltage, high-current power transistor. This transistor is used in a variety of power applications, including audio amplifiers, output terminals, and power amplifiers.

Part number : C5200

Function : NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Package: TO-264 Type

Manufacturer: Toshiba Semiconductor

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2SC5200 transistor

The pin configuration consists of a base, collector, and emitter.

Description

The 2SC5200 is a high power NPN Transistor with a collector to emitter voltage of 230V and collector current of 30A. The transistor is available in TO-264 package and is commonly used Amplifier designs.

This transistor have high voltage handling capabilities and can handle large voltage differences. This allows for high-quality audio output and power amplification, providing superior sound quality and performance when used in audio amplifiers or speaker systems.

 

Product Information

1. High breakdown voltage: VCEO= 230 V (min)

2. Complementary to 2SA1943

3. Suitable for use in 100-W high fidelity audio amplifier’s output stage

4. Transition Frequency is 30MHz

 

Pinout

2SC5200 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 230 V

2. Collector to Emitter Voltage : Vceo = 230 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 15 A

5. Total Dissipation : Pc = 150 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

 

Applications

1. Audio frequency Amplifier

2. AF /RF circuits

3. Low Slew rate devices

4. Push-Pull configuration circuits

5. high current switching (upto 15A) loads

6. Can be used as medium Power switches

2SC5200 Datasheet PDF

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D13009K Datasheet – 400V, 12A, NPN Transistor

D13009K is an NPN (BJT) type high-power transistor. This transistor is used in high-current and high-voltage applications, primarily performing power conversion, switching, and amplification functions.

Part number : 3DD13009K

Functions : NPN bipolar power transistor ( 12A, 400V )

Package information : TO-220C, TO-3PB Type

Manufacturer: Jilin Sino Microelectronics ( https://www.hwdz.com.cn/ )

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D13009K datasheet

Description

D13009K features collector currents up to 12A and collector-emitter voltages up to 400V. This allows them to be used in large power electronic circuits and operate effectively in high-power switching applications. High Voltage Fast-Switching NPN Power Transistor.

Pinout

D13009K pinout transistor

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Ultrasonic Generator

7. High-frequency power conversion

8. General power amplifier circuit

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Marking Information

D13009K Main Characteristics

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage : Vceo = 400 V

2. Emitter to Base Voltage : Vebo = 9 V

3. Collector Current : Ic = 12 A

4. Total Dissipation : Pc = 120 W

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C

D13009K Datasheet PDF Download

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D13009K pdf

Other data sheets within the file : 3DD13009K-O-C-N-B, 3DD13009K-O-AB-N-B