D2058 is a 60V, 3A, NPN power transistor. This transistor is used in high-voltage and high-current applications and are suitable for a variety of uses in power electronic circuits.

Part number : 2SD2058, KSD2058

Functions : 60V, Silicon NPN Power Transistor

Package information : TO-220F Type

Manufacturer: SavantIC Semiconductor

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Description

An NPN Epitaxial Silicon Transistor is a type of bipolar junction transistor (BJT) that uses NPN (Negative-Positive-Negative) configuration.

D2058 transistor is commonly used in electronic circuits for applications such as amplification and switching. It allows current to flow from the collector to the emitter when a small current is applied to the base terminal.

 

Pinout

Product Information

1. With TO-220F package

2. Complement to type 2SB1366

3. Low collector saturation voltage :  VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A

4. Collector power dissipation : Pc = 25W (Tc = 25 °C)

 

Applications

1. With general purpose

 

Absolute maximum ratings (Ta=25 °C)

1. Collector-base voltage Open emitter : VCBO = 60 V

2. Collector-emitter voltage Open base : VCEO = 60 V

3. Emitter-base voltage Open collector : VEBO = 7 V

4. Collector current : IC = 3 A

5. Base current : IB = 0.5 A

D2058 Datasheet PDF

 

Other data sheets within the file : 2SD2058

E13007F2 is 400V, 8A, NPN Silicon Transistor.

Part number : E13007F, MJE13007F2, KSE13007F

Functions : 400V, 8A, NPN Transistor

Package information : TO-220F Type

Manufacturer: Fairchild Semiconductor

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Description

E13007F2 transistor is used in high voltage and high current applications, mainly applied in power conversion, power supply and switching circuits, etc.

These transistors are available in a TO-220 package and provide stable performance in high voltage circuits.

Pinout

Features

• High Speed Switching

• Suitable for Switching Regulator and Motor Control

 

Application

1. High Voltage Switch Mode

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 700 V

2. Collector to Emitter Voltage : Vceo = 400 V

3. Emitter to Base Voltage : Vebo = 9 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 40 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

 

E13007F2 Datasheet PDF Download

Other data sheets within the file : E13007F, E13007F-2