Information about the MOSFET 13NM60N manufactured by STMicroelectronics can be found here.
Part Number: STF13NM60N, STL13NM60N
Function: N-Channel 600V, 11A, Power MOSFET
Package: TO-220FP
Manufacturers: STMicroelectronics
Description
13NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Marking 13NM60N Package PowerFLAT™ (8×8) HV Packaging Tape and reel Order code STL13NM60N May 2011 Doc ID 018870 Rev 1 1/14 www.st.com [ … ]
Pinouts
Applications
• Switching applications
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 25 V
3. Drain current : ID = 11 A
4. Drain power dissipation : Ptot = 25 W
5. Single pulse avalanche energy : Eas = 200 mJ
6. Avalanche curren : Iar = 3.5 A8
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C
13NM60N PDF Datasheet
STL13NM60N Datasheet PDF
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