FTP08N06A Replacement – N-Ch, 55V, MOSFET

This is 50V, 120A, MOSFET.

Part number : FTP08N06A

Functions : N-Channel Enhancement MOSFET

Package: TO-220 Type

Manufacturer: IPS

Image :

FTP08N06A datasheet

 

Description

N-Channel MOSFET

Features

• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 55 V
3. Drain current : ID = 120 A
4. Drain power dissipation : PD = 230 W
5. Single pulse avalanche energy : Eas = 760 mJ
8. Channel temperature : Tch = 175 °C
9. Storage temperature : Tstg = -55 to +175 °C

 

Applications

• Automotive
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)

[ … ]

FTP08N06A PDF File

FTP08N06A Replacement

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C3198 Transistor – 60V, 150mA, NPN Silicon, TO-92

C3198 transistor technical information, including its features and specifications is available in this post.

Part Number: 2S3198

Function: 60V, 150mA, NPN Silicon Epitaxial Planar Transistor.

Package: TO-92 Type

Manufacturer: Elite, SEMTECH

Image :

C3198 transistor

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 150 mA

5. Total Dissipation : Pc = 625 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Some text files in PDF file:

ST C3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 150 50 500 125 -55 to +125 Unit V V V mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SC3198 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB Rbb’ NF Min. 70 120 200 350 25 80 – – G S P FORM A IS AVAILABLE Typ. 100 0.1 2 50 1 Max. 140 240 400 700 0.25 1 0.1 0.1 3.5 – 10 Unit V V µA µA MHz pF Ω dB SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 [ … ]

C3198 PDF File

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