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The P45N02LDG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in high-efficiency switching applications.

Functions : N-Channel Logic Level Enhancement Mode Field Effect Transistor

Package information : TO-252 Type

Manufacturer: NIKO-SEM, UNIKC, NIKOS

Image :
nikos p45n02ldg mosfet

Description

The P45N02LDG is an N-channel MOSFET, primarily designed for low-voltage, high-current applications. Its specifications make it suitable for use in motor drives, DC-DC converters, and load-switching circuits.

Functions:

1. High Current Handling: Rated to manage significant currents, making it suitable for demanding applications.

2. Fast Switching: Ensures high efficiency in switching-mode power supplies and converters.

Pinout

P45N02LDG datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 45 A

4. Drain power dissipation: PD =55 W

5. Single pulse avalanche energy: Eas =140 mJ

6. Avalanche current: Iar = 20 A

7. Repetitive avalanche energy: Ear = 5.6 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

Applications

1. DC-DC Converters

2. Motor Drives

3. Battery Management Systems (BMS)

4. Load Switching

P45N02LDG Datasheet PDF

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Part number: 2N2222A

Functions: NPN Amplifier Transistor, High Speed Switch

Package: TO-92 type , TO-18, TO-39 Can type

Manufacturer: ON Semiconductor , STMicroelectronics

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2N2222A transistor

Decription

The 2N2222A is a common NPN bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.

The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.