transistor

A1015 Transistor – (-)50V, PNP, TO-92, TR

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This is PNP Transistor.

Part Number: A1015

Function  : Silicon PNP Epitaxail Type Transistor

Package: TO-92 type

Manufacturer: Toshiba, Semtech

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A1015 transistor

Description :

A1015 is a low cost good quality PNP transistor that is mainly designed to use as an audio amplifier or in audio amplification stages. The max collector to emitter voltage of the transistor is 50V therefore it can easily be used in circuits operating under 50V.

Applications

1. Audio Frequency Amplifier
2. Low Noise Amplifier

Features

• High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815 (L)

A1015 Pinout

A1015 pinout datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = – 50 V
2. Collector to Emitter Voltage : Vceo = – 50 V
3. Emitter to Base Voltage : Vebo = – 5 V
4. Collector Current : Ic = – 150 mA
5. Total Dissipation : Pc = 400 mW
6. Junction Temperature : Tj = 125°C
7. Storage Temperatue : Tsg = -55 ~ +125°C

A1015 Transistor

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5N60C – 600V, N-Ch, MOSFET (Transistor)

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Part number : 5N60C, FQP5N60C, FQPF5N60C

Functions : 600V, 4.5A, N-Channel MOSFET

Package information : TO-220, TO-220F Type

Manufacturer: Fairchild

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5N60C transistor mosfet

Product Information

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

5N60C Pinout

5N60C datasheet pinout

 

Features

1. 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

2. Low gate charge ( typical 15 nC)

3. Low Crss ( typical 6.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage : Vdss = 600 V
2. Drain Current : Id = 4.5 A
3. Gate-Source Voltage : Vgss = ± 30 V
4. Single Pulsed Avalanche Energy : Eas = 210 mJ
5. Avalanche Current : Iar = 4.5 A

 

5N60C Datasheet PDF

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