D1047 Datasheet – NPN Transistor, TO-3P – ST

This is a kind of semiconductor, D1047 Datasheet PDF learn more.

Part number : D1047

Functions : NPN Transistor

Package information : TO-3P Type

Manufacturer: STMicroelectronics

Image :

D1047 datasheet

The texts in the PDF file :

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

 

Features

1. High breakdown voltage VCEO = 140 V
2. Typical ft = 20 MHz
3. Fully characterized at 125 oC

Application

1. Power supply

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Pinout

D1047 pinout transistor

Pin arrangement : 1. Base, 2. Collector, 3. Emitter

D1047 Datasheet PDF File

D1047

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10N60 Transistor – 600V, (MOSFET)

This is a kind of the transistor.

Part number : 10N60

Functions : 600V, N-Channel MOSFET, Transistor

Package information : TO-220, TO-220F,

Manufacturer: Unisonic Technologies

Image :

10N60 transistor mosfet

Pinout :  1. Gate  2. Draion  3. Source

 

The texts in the PDF file :

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

 

Pinout

10N60 pinout datasheet

Features

1. RDS(ON) < 0.75Ω@VGS =10V
2. Fast switching
3. 100% avalanche tested
4. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 10 A
4. Drain power dissipation : PD = 156 W
5. Single pulse avalanche energy : Eas = 700 mJ
6. Repetitive avalanche energy : Ear = 15.6 mJ
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C

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10N60 Transistor PDF File

10N60

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