C3198 transistor technical information, including its features and specifications is available in this post.

Part Number: 2S3198

Function: 60V, 150mA, NPN Silicon Epitaxial Planar Transistor.

Package: TO-92 Type

Manufacturer: Elite, SEMTECH

Image :

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 150 mA

5. Total Dissipation : Pc = 625 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Some text files in PDF file:

ST C3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 150 50 500 125 -55 to +125 Unit V V V mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SC3198 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB Rbb’ NF Min. 70 120 200 350 25 80 – – G S P FORM A IS AVAILABLE Typ. 100 0.1 2 50 1 Max. 140 240 400 700 0.25 1 0.1 0.1 3.5 – 10 Unit V V µA µA MHz pF Ω dB SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 [ … ]

C3198 PDF File

Part number: 2N2222A

Functions: NPN Amplifier Transistor, High Speed Switch

Package: TO-92 type , TO-18, TO-39 Can type

Manufacturer: ON Semiconductor , STMicroelectronics

Image

Decription

The 2N2222A is a common NPN bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.

The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.

 

Pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 75 V

2. Collector to Emitter Voltage : Vceo = 40 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 600 mA

5. Total Dissipation : Pc = 625 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

 

 

Applications

This transistor is primarily used in low voltage and low current applications. For example, it can be used in signal amplification, switching circuits, wave generators, semiconductor laser drivers, etc.

1. Switching and Linear

2. DC and VHF Amplifier

 

Other data sheets within the file : 2N2219A

2N2222A Datasheet PDF Download