This is a kind of IGBT. FGD4536 Datasheet PDF learn more.

Part number : FGD4536

Functions : 360 V PDP Trench IGBT.

Package information : TO-252, D-PAK Type

Manufacturer: Fairchild Semiconductor

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The texts in the PDF file :

360V, PDP Trench IGBT

Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential.

 

Features

• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant

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Pinout ( Pin arrangement )

Applications

• PDP TV, Consumer Appliances

 

FGD4536 Datasheet Transistor IGBT File

H30R1602 Datasheet PDF learn more.

Part number : H30R1602, IHW30N160R2

Functions : 1600V, 30A, IGBT ( The IGBT is insulated-gate bipolar transistor. )

Package information : TO-247-3 Type

Manufacturer: Infineon

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The texts in the PDF file :

IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Features

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1600 V applications offers : – very tight parameter distribution G – high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications PG-TO-247-3

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C E Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW30N160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls IF IFpuls IFSM VGE Ptot Tj Tstg – 1600 60 30 90 90 60 30 90 50 130 120 ±20 ±25 312 -40…+175 -55…+175 260 V A V W °C 1 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.1 Nov 09 IHW30N160R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction [ … ]

Pinout ( Pin arrangement )

Applications :

• Inductive Cooking
• Soft Switching Applications

H30R1602 PDF File