This is one of the MOSFET types.
Part number : K15A60D , TK15A60D
Functions : 600V, Silicon N Channel MOSFET, Transistor
Package: TO-220 type
Manufacturer: Toshiba Semiconductor
Image :

The texts in the PDF file :
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
[ … ]
Pinout

Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 15 A
4. Drain power dissipation : PD = 50 W
5. Single pulse avalanche energy : Eas = 527 mJ
6. Avalanche current : Iar = 15 A
7. Repetitive avalanche energy : Ear = 5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Switching Regulator



