B772P – PNP Silicon Power Transistor – NEC

Part number : B772P, 2SB772

Function : PNP SILICON POWER TRANSISTOR

Manufacturer: NEC

Image :
B772P image

Features

  1. Low saturation voltage
  2. Excellent hFE linearity and high hFE
  3. Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.

Description :

The B772P is PNP silicon transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver.

B772P datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = – 40 V

2. Collector to Emitter Voltage : Vceo = – 30 V

3. Emitter to Base Voltage : Vebo = – 5 V

4. Collector Current : Ic = – 3A

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C

 

B772P Datasheet PDF

B772P pdf

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11N80C3 Datasheet – 800V, MOSFET (Transistor)

This is a kind of transistor.

Part number : 11N80C3, SPP11N80C3

Functions : 800V, CoolMOS Power Transistor

Package information : TO-220-3 Pin Type

Manufactures : Infineon

Image

11N80C3 datasheet mosfet

Description :

800V, CoolMOS Power Transistor

Features

• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances

[ … ]

Absolute Maximum Ratings (Ta = 25°C)

1. Continuous drain current : Id = 11 A
2. Pulsed drain current : Id = 33 A
3. Avalanche energy, single pulse : Eas = 470 mJ
4. Avalanche energy, repetitive t AR : Ear = 0.2 mJ
5. Gate source voltage : Vgs = ± 20 V

Pinout

CoolMOSTM 800V designed for:

• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)

11N80C3 Transistor File

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