G40N60 PDF – 600V, Ultra-Fast IGBT (Transistor)

G40N60 is an N-channel MOSFET (long-channel Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor. This MOSFET is a power device used in high voltage (600V) and high current (40A) applications.

Part number : SGH40N60, FGA40N60

Functions : 600V, 40A, Ultra-Fast IGBT

Package: TO-247 Type

Manufacturer: Fairchild Semiconductor

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G40N60 datasheet mosfet

Description

G40N60 has fast switching speeds and excellent low-voltage drop characteristics, making it suitable for high-efficiency power conversion and switching circuits. This helps minimize power loss and achieve high power efficiency.

Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Pinout

G40N60 Datasheet PDF

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Applications

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Other data sheets within the file : SGH40N60UFD

G40N60 Datasheet PDF

G40N60 pdf

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D13009K Datasheet – 400V, 12A, NPN Transistor

D13009K is an NPN (BJT) type high-power transistor. This transistor is used in high-current and high-voltage applications, primarily performing power conversion, switching, and amplification functions.

Part number : 3DD13009K

Functions : NPN bipolar power transistor ( 12A, 400V )

Package information : TO-220C, TO-3PB Type

Manufacturer: Jilin Sino Microelectronics ( https://www.hwdz.com.cn/ )

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D13009K datasheet

Description

D13009K features collector currents up to 12A and collector-emitter voltages up to 400V. This allows them to be used in large power electronic circuits and operate effectively in high-power switching applications. High Voltage Fast-Switching NPN Power Transistor.

Pinout

D13009K pinout transistor

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Ultrasonic Generator

7. High-frequency power conversion

8. General power amplifier circuit

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Marking Information

D13009K Main Characteristics

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage : Vceo = 400 V

2. Emitter to Base Voltage : Vebo = 9 V

3. Collector Current : Ic = 12 A

4. Total Dissipation : Pc = 120 W

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C

D13009K Datasheet PDF Download

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D13009K pdf

Other data sheets within the file : 3DD13009K-O-C-N-B, 3DD13009K-O-AB-N-B