transistor

K25T1202 PDF – 1200V, 25A, IGBT, Infineon

Posted on by Manager

Part number : IKW25N120T2

Marking Code : K25T1202

Package information : PG-TO-247-3 Type

Functions : 1200V, Low Loss DuoPack / IGBT in 2nd generation TrenchStop

Manufacturer: Infineon Technologies

Image

K25T1202 transistor

Description

K25T1202 is a high-power IGBT designed for various power electronic applications. IGBTs combine the characteristics of both MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar junction transistors (BJTs), making them suitable for high voltage and high current applications.

This IGBT has a voltage rating of 1200V, meaning it can handle a maximum voltage of 1200 volts. It also has a current rating of 25A, indicating it can handle a maximum continuous current of 25 amperes.

Features

1. Short circuit withstand time  – 10 us

2. Designed for :

– Frequency Converters

– Uninterrupted Power Supply

3. TrenchStop 2nd generation for 1200 V applications offers :

– Very tight parameter distribution

– High ruggedness, temperature stable behavior

4. Easy paralleling capability due to positive temperature coefficient in V CE(sat)

5. 1200V 25A 1.7V 175°C

 

Pinout : K25T1202

 

K25T1202 Datasheet PDF Download

K25T1202 pdf
Other data sheets within the file : IKW25N120T2, K25T-1202

D669A Transistor – NPN, 160V, 1.5A ( 2SD669A )

Posted on by Manager

D669A transistor learn more.

Part number : 2SD669A

Functions : NPN Epitaxial Silicon Transistor

Package information : TO-126MOD Package

Manufacturer: Hitachi

Image

D669A transistor

Description

D669A transistor typically has a maximum collector-base voltage (Vcbo) of 180V, a maximum collector-emitter voltage (Vceo) of 160V, and a maximum emitter-base voltage (Vebo) of 5V. The maximum collector current (Ic) is 1.5A.

The 2SD669A transistor is an NPN (Negative-Positive-Negative) type transistor commonly used in various electronic applications. It is designed to handle medium to high voltage and current levels.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 180 V

2. Collector to emitter voltage : VCEO = 160 V

3. Emitter to base voltage : VEBO 5 V

4. Collector current IC : 1.5 A

5. Collector peak current : IC(peak) = 3 A

6. Collector power dissipation : PC 1 W

7. Junction temperature : Tj =  150 °C

8. Storage temperature : Tstg = –55 to +150 °C

[ … ]

Pinout

D669A pinout datasheet

 

Applications

1. Low frequency power amplifier complementary pair with 2SB649/A

D669A Transistor PDF

D669A

download