Part number : PF610BL
Functions : 100V, 0.9A, N-Channel Enhancement Mode MOSFET.
Pakcage : SOT-223 Type
Manufacturer: UNIKC Semicondcutor
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Description
The PF610BL is an N-channel enhancement-mode MOSFET manufactured by U-NIKC Semiconductor. It is housed in a compact SOT-223 package, making it suitable for space-constrained applications requiring efficient switching and low power loss.
Features
1. Low On-Resistance: Ensures minimal conduction losses, enhancing efficiency in power applications.
2. High Switching Speed: Facilitates fast switching operations, suitable for high-frequency applications.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 100 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 0.9 A
4. Drain power dissipation : PD = 1.3 W
5. Single pulse avalanche energy : Eas = 7.2 MJ
6. Avalanche current : Ias = 3.8 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Power Supply Circuits: For efficient voltage regulation and conversion.
2. Switching Regulators: In DC-DC converters for efficient power conversion.
3. Motor Control Circuits: For controlling the operation of DC motors.
4. Signal Switching: In digital circuits requiring fast switching capabilities.
PF610BL PDF File
