Transistor 2SC1957 Datasheet PDF learn more.
Functions: 40V, 1A, Silicon NPN Transistor
Package information: TO-126 type
Manufacturer: NEC
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Description
2SC1957 is a silicon NPN bipolar junction transistor designed for large signal output amplification, offering high frequency performance and moderate power handling in RF and general-purpose amplifier applications. It features good gain characteristics, low saturation voltage, and stable operation suitable for high-frequency circuits. This transistor is commonly used in RF power amplifiers, communication equipment, and signal amplification stages.
Features
- Silicon NPN transistor for large signal amplification
- High transition frequency (fT up to 250MHz)
- Low collector-emitter saturation voltage
- Wide gain range with multiple hFE classifications
- Suitable for RF and high-frequency applications
- Stable thermal performance
- Compact and reliable package
Specifications
Absolute Maximum Ratings (Tc = 25 °C)
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 75 | V |
| Collector-Emitter Voltage | VCEO | 40 | V |
| Emitter-Base Voltage | VEBO | 4.0 | V |
| Collector Current | IC | 1.0 | A |
| Power Dissipation (Ta=25°C) | PC | 0.75 | W |
| Power Dissipation (Tc=25°C) | PC | 5.0 | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -55 to 150 | °C |
Design Notes
- Ensure adequate heat sinking when operating near maximum power levels
- Biasing network should be carefully designed for stable RF operation
- Minimize parasitic inductance and capacitance in high-frequency layouts
- Use proper impedance matching for RF amplifier stages
- Consider gain classification (S, R, Q, K) when selecting devices
Typical Circuit Usage
- RF power amplifier stages in communication systems
- Large signal amplification circuits
- Driver stages for RF transmitters
- General-purpose high-frequency amplification
- Signal boosting in analog front-end circuits
How to Choose This Part
- Select based on required frequency performance and gain
- Ensure voltage and current ratings meet application needs
- Choose appropriate hFE classification for gain requirements
- Consider thermal dissipation capability in design
- Verify compatibility with RF circuit impedance and layout
Applications
- RF transmitters and receivers
- Wireless communication equipment
- Audio and signal amplification circuits
- Industrial RF systems
- General-purpose amplifier designs
Alternative / Equivalent Products
- 2SC1971 RF power transistor
- 2SC2078 RF transistor
- 2SC2166 RF amplifier transistor
- 2N3866 RF transistor
- BFQ19 high-frequency transistor
[ … ]
2SC1957 PDF File
