TIP147 Datasheet – 10A, 100V, PNP DarlingtonTransistor

The TIP147 is a PNP Darlington power transistor designed for high-current and high-voltage switching and amplification applications. Being a Darlington pair, it effectively combines two transistors in a single package, providing a very high current gain (hFE) while maintaining robust voltage and current handling. This makes the TIP147 ideal for power regulation, motor control, and audio amplification circuits.

Functions: 10A, 100V PNP Darlington Bipolar Power Transistor

Package information: TO-220AB Type

Manufacturer: ON Semiconductor

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TIP 147 PNP Darlington Transistor

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications. TIP145, TIP146, TIP147, (PNP) are complementary devices. Complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching applications where high gain is required. The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Pinout

TIP147 pinout datasheet

Features

1. High DC Current Gain : Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V

2. Collector−Emitter Sustaining Voltage : @ 30 mA, VCEO(sus) = 100 Vdc (Min)

3. Monolithic Construction with Built−In Base−Emitter Shunt Resistor

4. High Voltage and Current Handling:

Can handle up to 100 V collector-emitter voltage and 10 A continuous current, suitable for medium- to high-power applications.

 

TIP147 Schemetic

TIP147 Schematic

 

Appications

1. Linear and switching industrial equipment

2. Audio power amplifiers

3. Motor control and H-bridge circuits

4. High-current switch applications

5. Voltage regulation and relay drivers

 

TIP147 Datasheet PDF

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C4804 Datasheet – 600V, 3A, NPN Transistor

Part number: 2SC4804

Functions: 600V, 3A, Silicon NPN Power Transistor

Package: ITO-220 Type

Manufacturer: SavantIC

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C4804 datasheet pdf

Description

C4804 transistor is a high-voltage, silicon NPN power transistor housed in an ITO-220 package.

 

Key Features

  • ITO-220 package for compact thermal handling
  • High breakdown voltages up to 900V
  • Suitable for fast switching and high-voltage conversion

 

Pin Configuration

transistor C4804 pinout

Pin Function
1 Base
2 Collector
3 Emitter

Absolute Maximum Ratings (Ta = 25°C)

Parameter Symbol Conditions Value Unit
Collector-Base Voltage VCBO Open emitter 900 V
Collector-Emitter Voltage VCEO Open base 600 V
Emitter-Base Voltage VEBO Open collector 7 V
Collector Current (DC) IC 3 A
Collector Current (Peak) ICM 5 A
Base Current IB 1 A
Total Power Dissipation (Tc=25°C) PT 30 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to +150 °C

Electrical Characteristics (Tj = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 600 V
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 900 V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 7 V
Collector-Emitter Saturation Voltage VCEsat IC = 0.8A, IB = 0.16A 0.6 V
Base-Emitter Saturation Voltage VBEsat IC = 0.8A, IB = 0.16A 1.2 V
Collector Cut-off Current ICBO VCB = 800V, IE = 0 0.1 mA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 0.1 mA
DC Current Gain hFE IC = 0.8A, VCE = 5V 10

 

Applications

  • High-speed DC-DC converters
  • Switching regulators
  • High-voltage switching applications

 

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C4804 PDF File

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