PA102FDG PDF Download
Description
This is P-Channel Enhancement Mode MOSFET. PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID -10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS, TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-10 -6.2 -24
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 9.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤1%
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 5
110
UNITS °C , W
Ver 1.1
1 2013-3-26
PA102FDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate.
Related Part Number
PA2030A | PAL007 | PAL16L8A-2CN | PA2030 | PA7540P-15 | PAL007E |