MHPM6B10A60D PDF Download

Motorola
MHPM6B10A60D
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel

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Description

This is Hybrid Power Module. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10A60D, D Preliminary Data Sheet Integrated Power Stage for 230 VAC Motor Drives Hybrid Power Module These modules integrate a 3 phase inverter in a single convenient package. They are designed for 1.0 and 2.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. Short Circuit Rated 10 s @ 125°C Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) Compact Package Outline Access to Positive and Negative DC Bus UL Recognized MHPM6B10A60D MHPM6B20A60D Motorola Preferred Devices 10, 20 AMP, 600 V HYBRID POWER MODULES PRELIMINARY MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current (1) C.

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