ME4856 PDF Download

VBsemi
ME4856D-VB
Nmosfet, - £¨VDS£©30V, - £¨VGS£©¡À20V, - £¨VTH£©1.7V, - VGS=4.5V, 5M?, VGS=10V, 4M?, - £¨ID£©18A, - Trench, - SOP8, Pcb
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Description

This is N-Channel 30-V(D-S) MOSFET. N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME4856 FEATURES ● RDS(ON) 6mΩ@VGS=10V ● RDS(ON) 8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC, DC Converter ● Load Switch PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dr.

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