IXFN170N10 PDF Download

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IXFN170N10
MOSFET N-CH 100V 170A SOT-227B / N-Channel 100 V 170A (Tc) 600W (Tc) Chassis Mount SOT-227B

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Description

This is HiPerFET Power MOSFET. HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N10 IXFK170N10 100V 100V TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 170N10 170N10 100 100 ±20 ±30 170 76 680 170 60 5 560 -55 ... +150°C 150 -55 ... +150°C 100 100 ±20 ±30 170 NA 680 170 60 5 V V V V A A A mJ S G D S VDSS VDGR VGS VGSM ID25 ID125 IDM IAR EAR dv, dt PD TJ TJM Tstg TL VISOL Md Weight T J = 25°C to 150°C T J = 25°C to 150°C Continuous Transient TC = 25°C TC = 125°C T C = 25 ° C TC = 25°C TC = 25°C IS IDM, di, dt 100 A, ms, VDD VDSS T J 150°C, RG = 2 W TC = 25°C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V, ns 600 W °C °C V~ V~ D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50, 60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 N, A N, A 0.9, 6 N, A 10 N, A 2500 3000 Mounting torque Terminal connecti.

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