22N055 PDF Download

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NP22N055HLE-AY

Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Description

This is N-CHANNEL POWER MOSFET. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) Low Ciss : Ciss = 590 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEITA) , MP-3 TO-252 (JEITA) , MP-3Z NP22N055SHE TO-252 (JEDEC) , MP-3ZK Note Not for new design. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±22 ±55 Total Power Dissipation (TA = 25°C) PT 1.2 Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2 PT IAS EAS 45 13 , 5 16 , 25 Channel Temperature .