Part number : RJP30H2A
Manufacturer : Renesas
Package information : TO-263
Functions : N-Channel, IGBT , 360V, 35A
See the preview image and the RJP30H2A PDF file for more information.
Image :
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max
Absolute Maximum Ratings
1. Collector to Emitter voltage : Vces = 360 V
2. Collector current : Ic = 35 A
Applications
High speed power switching
RJP30H2A PDF
