RJP30H2A PDF – 360V, 35A, IGBT, Transistor, MOSFET

Part number : RJP30H2A

Manufacturer : Renesas

Package information : TO-263

Functions : N-Channel, IGBT , 360V,  35A

See the preview image and the RJP30H2A PDF file for more information.

Image :

RJP30H2A transistor igbt mosfet

RJP30H2A image

Features

1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max

Absolute Maximum Ratings

1. Collector to Emitter voltage : Vces = 360 V
2. Collector current : Ic = 35 A

Applications

High speed power switching

RJP30H2A PDF

RJP30H2A pdf