Part number : RJP30H1, RJP30H1DPD
Functions : 360V, 30A, N-Channel Power MOSFET
Package : TO-263 Type
Manufacturer : Renesas Electronics
Pinout :
Functions :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
Absolute Maximum Ratings (Tc = 25°C)
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 30 A
4. Junction temperature : Tj = 150 °C
5. Storage temperature : Tstg = -55 to +150 °C
RJP30H1 Datasheet PDF Download ( RJP30H1DPD )
