RJP30H1 PDF – RJP30H1DPD, 360V, MOSFET

Part number : RJP30H1, RJP30H1DPD

Functions : 360V, 30A, N-Channel Power MOSFET

Package : TO-263 Type

Manufacturer : Renesas Electronics

Pinout :

RJP30H1DPD datasheet

 

Functions :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

 

RJP30H1DPD Datasheet PDF

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Junction temperature : Tj = 150 °C

5. Storage temperature : Tstg = -55 to +150 °C

 

RJP30H1 Datasheet PDF Download ( RJP30H1DPD )

RJP30H1DPD pdf