Part number : RJP30H1, RJP30H1DPD
Functions : N-Channel Power MOSFET / TO-263
Manufacturer : Renesas Electronics
Pinout :
Functions :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
