RJP30E4 IGBT – 360V N-Channel

Part number : RJP30E4

Functions : N Channel  IGBT 360V 35A (200App) 75W Tf

Manufacturer : Panasonic, Renesas

Image : TO263 Package information

Renesas Number : RJP30E4 TRANSISTOR

Panasonice Number : B1JBEN000002 Transistor

Specifications

1. Drain-Source Voltage (V_CES) : 360 V
2. Collector Current (I_C) ; 40 A
3. Collector Current Pulsed (I_C(peak)) : 250A
4. Gate-Emitter Voltage (V_GES) : +-30V
5. Power Dissipation (P_D) : 30 W

 

RJP30E4 Datasheet PDF

Reference Datasheet RJP30E3

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