What is L8711P?

This is SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR.

[PDF] Complete Technical Details can be found in the L8711P datasheet provided at this page.

Datasheet Summary in PDF File

polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications Suitable for Militry Radios Cellular and Paging Amplifier Base Stations Broadcast FM AM MRI Laser Driver and others Polyfet process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7 0 Watts Single Ended Package Style S08 P HIGH EFFICIENCY LINEAR HIGH GAIN LOW NOISE o ABSOLUTE MAXIMUM RATINGS T 25 C Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2 50 C W Maximum Junction Temperature o 150 C Storage Temperature o o 65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 8 0 A RF CHARACTERISTICS SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 50 TYP 7 0 WATTS OUTPUT MAX UNITS dB 20 1 Relative TEST CONDITIONS Idq 0 40 A Vds Idq 0 40 A Vds 7 5 V F 500 MHz 7 5 V F 500 MHz VSWR Idq 0 40 A Vds 7 5 V F 500 MHz ELECTRICAL CHARACTERISTICS EACH SIDE SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER

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Manufacturers : Polyfet RF Devices

POLYFET L8711P TRANSISTOR

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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Datasheet L8711P.PDF DownLoad ( POLYFET )

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