What is MBRF3050CT?
This is Schottky Barrier Rectifiers. The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection. The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high- |
[PDF] Complete Technical Details can be found in the MBRF3050CT datasheet provided at this page.Datasheet Summary in PDF FileProduction specification Schottky Barrier Rectifiers MBRF3030CT MBRF30100CT FEATURES z High surge capacity z For use in low voltage high frequency Pb Lead free Inverters free wheeling and polarity protect tion applications z Metal silicon junction majority carrier conduction z High current capacity lowforward voltage drop z Guard ring for over voltage protection ITO 220AB MAXIMUM RATING operating temperature range applies unless otherwise specified MBRF MBRF MBRF MBRF MBRF MBRF MBRF Symbol Parameter 3030 3035 3040 3045 3050 3060 3080 CT CT CT CT CT CT CT VRRM Recurrent Peak Reverse Voltage 30 35 40 45 50 60 80 MBRF 30100 CT 100 Unit V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V DC Blocking VDC Voltage 30 35 40 45 50 60 80 100 V IF AV IFSM R JC Tj Tstg Average Forward Total Device Rectified Current TA 100 C Peak Forward Surge Current 8 3ms Single Half Sine wave Superimposed on rated load Thermal Resistance Note1 Operating Junction and StorageTemperature Range 30 200 6 8 55 to 150 A A 4 4 W Note 1 Thermal resistance from junction to case S004 Rev A www gmicroelec com 1 Production specification Schottky Barrier Rectifiers MBRF3030CT MBRF30100CT ELECTRICAL CHARACTERISTICS Ta 25 unless otherwise specif |
Datasheet Download (PDF) |
[ Detailed Data ] |
SBDs are commonly used in power supplies, voltage regulators, and DC-DC converters, as well as in high-frequency applications such as mixers and detectors in radio and microwave circuits. Manufacturers : Galaxy Microelectronics  |
GME MBRF3050CT RECTIFIER Schottky Barrier Rectifiers More Search |
Datasheet MBRF3050CT.PDF DownLoad ( GME ) |
[ Home ] |
| Related Part Number |
|
Although each manufacturer has the same part name, the detailed parameters of its function may differ slightly. Therefore, it is important to check accurate data from various manufacturers. |
Taiwan MBRF3050CT
Rectifier : Isolated 30.0 AMPS. Schottky Barrier Rectifiers
Preview
[ Taiwan Semiconductor ]
Taiwan MBRF3050CT
Rectifier : Dual Common Cathode Schottky Rectifier
Preview
[ Taiwan Semiconductor ]
Electronic Components Distributor |
|
DataSheetGo.com offers a broad range of information on various semiconductors, including their specifications, features, applications, and pricing, among others. |
|
Related keywords to MBRF3050CT include schematic, equivalent, circuit, and replacement |
|
New | Datasheet Search Privacy Policy | Contact Us Sitemaps DataSheetGO.com | @ 2022 |