What is IRF1405ZPBF?


This is HEXFET Power MOSFET.


[PDF] Complete Technical Details can be found in the IRF1405ZPbF datasheet provided at this page.

Summary in PDF File


Features l Advanced Process Technology l Ultra Low On Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area Additional features of this design are a 175 C junction operating temperature fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications PD 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF HEXFET Power MOSFET D VDSS 55V G RDS on 4 9m S ID 75A TO 220AB D2Pak TO 262 IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Absolute Maximum Ratings Parameter ID TC 25 C Continuous Drain Current VGS 10V Silicon Limited ID TC 100 C Continuous Drain Current VGS 10V ID TC 25 C Continuous Drain Current VGS 10V Package Limited IDM Pulsed Drain Current PD TC 25 C Power Dissipation Linear Derating Factor VGS Gate to Source Voltage dEAS Thermally limited Single Pulse Avalanche Energy EAS Tested hSingle Pulse Avalanche Energy Tested Value IAR Avalanche Current gEAR Repetitive Avalanche Energy

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Manufacturers : International Rectifier

IR - IRF1405ZPBF Datasheet PDF

IR IRF1405ZPbF MOSFET

HEXFET Power MOSFET

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