What is IRF1010ZLPBF?


This is Power MOSFET, Transistor.


[PDF] Complete Technical Details can be found in the IRF1010ZLPbF datasheet provided at this page.

Summary in PDF File


PD 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area Additional features of this design are a 175 C junction operating temperature fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications Absolute Maximum Ratings HEXFET Power MOSFET D VDSS 55V G RDS on 7 5m S ID 75A TO 220AB D2Pak TO 262 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Parameter ID TC 25 C Continuous Drain Current VGS 10V Silicon Limited ID TC 100 C Continuous Drain Current VGS 10V ID TC 25 C Continuous Drain Current VGS 10V Package Limited IDM Pulsed Drain Current PD TC 25 C Power Dissipation Max 94 66 75 360 140 Units A W Linear Derating Factor VGS Gate to Source Voltage dEAS Thermally limited Single Pulse Avalanche Energy hEAS Tested Single Pulse Avalanche Energy Tested Value IAR Avalanche Current gE

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Manufacturers : International Rectifier

IR - IRF1010ZLPBF Datasheet PDF

IR IRF1010ZLPbF MOSFET

Power MOSFET, Transistor

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