What is NE02133?
This is NPN SILICON HIGH FREQUENCY TRANSISTOR. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material. |
[PDF] Complete Technical Details can be found in the NE02133 datasheet provided at this page.Datasheet Summary in PDF FileNEC s NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN 18 5 dB at 500 MHz LOW NOISE FIGURE 1 5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC s NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems Low noise and high current capability provide low intermodulation distortion The NE021 series is available as a chip or in several package styles The series uses the NEC gold platinum titanium and platinum silicide metallization system to provide the utmost in reliability NE02107 is available in both common base and common emitter configurations and has been qualified for high reliability space applications 00 CHIP 07 07B 33 SOT 23 STYLE 35 MICRO X NE02135 TYPICAL NOISE PARAMETERS TA 25 C FREQ MHz NFOPT dB GA dB OPT MAG ANG Rn 50 VCE 10 V IC 5 mA 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 1 2 1 5 2 0 2 4 2 6 3 6 3 7 1 8 1 9 2 4 2 9 3 2 3 9 4 3 18 60 13 82 11 83 9 36 7 82 7 51 6 31 21 32 16 15 13 50 11 02 9 12 8 10 6 48 36 31 50 44 52 68 71 16 33 46 53 57 62 67 69 124 165 175 161 141 139 149 |
Datasheet Download (PDF) |
[ Detailed Data ] |
Characteristics of NPN Transistors1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators. 3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter. 4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source. 5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. Manufacturers : CEL ![]() |
CEL NE02133 TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR More Search |
Datasheet NE02133.PDF DownLoad ( CEL ) |
[ Home ] |
| Related Part Number |
Although each manufacturer has the same part name, the detailed parameters of its function may differ slightly. Therefore, it is important to check accurate data from various manufacturers. |
Idt IDT71V67602133BG Ram
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
Preview
[ Integrated Device Technology ]
Idt IDT71V67602133BGI Ram
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
Preview
[ Integrated Device Technology ]
Idt IDT71V67602133BQ Ram
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
Preview
[ Integrated Device Technology ]
Electronic Components Distributor |
DataSheetGo.com offers a broad range of information on various semiconductors, including their specifications, features, applications, and pricing, among others. |
Related keywords to NE02133 include schematic, equivalent, circuit, and replacement |
New | Datasheet Search Privacy Policy | Contact Us Sitemaps DataSheetGO.com | @ 2022 |