What is 2SK3599-01MR?


An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

[PDF] Complete Technical Details can be found in the 2SK3599-01MR datasheet provided at this page.

Datasheet Summary in PDF File

2SK3599 01MR FUJI POWER MOSFET 200304 Super FAP G Series Features High speed switching Low on resistance No secondary breadown Low driving power Avalanche proof N CHANNEL SILICON POWER MOSFET Outline Drawings mm TO 220F Applications Switching regulators UPS Uninterruptible Power Supply DC DC converters Maximum ratings and characteristicAbsolute maximum ratings Tc 25 C unless otherwise specified Item Drain source voltage Continuous drain current Pulsed drain current Gate source voltage Non repetitive Avalanche current Maximum Avalanche Energy Maximum Drain Source dV dt Peak Diode Recovery dV dt Max power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX 5 ID ID puls VGS IAS 2 EAS 1 dVDS dt 4 dV dt 3 PD Ta 25 C Tc 25 C Tch Tstg VISO Ratings 100 70 29 116 30 29 155 8 20 5 2 16 37 150 55 to 150 2 Unit V V A A V A mJ kV s kV s W C C kVrms Equivalent circuit schematic Drain D Gate G Source S 6 1 L 222 H Vcc 48V Tch 25 C See to Avalanche Energy Graph 2 Tch 150 C 3 IF ID di dt 50A s Vcc BVDSS Tch 150 C 4 VDS 100V 5 VGS 30V 6 t 60sec f 60Hz Electrical characteristics Tc 25 C unless otherwise specified Item Drain source breakdown voltaget Gate

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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers : Fuji

FUJI - 2SK3599-01MR Datasheet PDF



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