What is MID75-12A3?

This is IGBT Modules.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance). They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

[PDF] Complete Technical Details can be found in the MID75-12A3 datasheet provided at this page.

Datasheet Summary in PDF File

MII 75 12 A3 MID 75 12 A3 MDI 75 12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 90 A VCES 1200 V VCE sat typ 2 2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC SCSOA RBSOA Ptot TJ Tstg VISOL Conditions TJ 25 C to 150 C TJ 25 C to 150 C RGE 20 kW Continuous Transient TC 25 C TC 80 C TC 80 C tp 1 ms VGE 15 V VCE VCES TJ 125 C RG 22 W non repetitive VGE 15 V TJ 125 C RG 22 W Clamped inductive load L 100 mH TC 25 C Maximum Ratings 1200 1200 20 30 90 60 120 10 ICM 100 VCEK VCES 370 150 40 150 V V V V A A A ms A Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W C C V V Nm lb in Nm lb in mm mm m s2 g oz Typical Applications q q q q space and weight savings reduced protection circuits 50 60 Hz RMS t 1 min t 1s IISOL 1 mA I

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[ Detailed Data ]

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : IXYS

IXYS MID75-12A3 IGBT

IGBT Modules

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Datasheet MID75-12A3.PDF DownLoad ( IXYS )

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