What is 2N7000?

This is CASE 29-04/ STYLE 22 TO-92 (TO-226AA).

[PDF] Complete Technical Details can be found in the 2N7000 datasheet provided at this page.

Datasheet Summary in PDF File

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000 D TMOS FET Transistor N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage RGS 1 0 M Gate Source Voltage Continuous Non repetitive tp 50 s Drain Current Continuous Pulsed Total Power Dissipation TC 25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ Tstg Value 60 60 20 40 200 500 350 2 8 55 to 150 mW mW C C Unit Vdc Vdc Vdc Vpk mAdc CASE 29 04 STYLE 22 TO 92 TO 226AA 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1 16 from case for 10 seconds Symbol R JA TL Max 357 300 Unit C W C ELECTRICAL CHARACTERISTICS TC 25 C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage VGS 0 ID 10 Adc Zero Gate Voltage Drain Current VDS 48 Vdc VGS 0 VDS 48 Vdc VGS 0 TJ 125 C Gate Body Leakage Current Forward VGSF 15 Vdc VDS 0 V BR DSS IDSS IGSSF 1 0 1 0 10 60 Vdc Adc mAdc nAdc ON CHARACTERI

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Manufacturers : Motorola Inc

MOTOROLA - 2N7000 Datasheet PDF


CASE 29-04/ STYLE 22 TO-92 (TO-226AA)

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Datasheet 2N7000.PDF DownLoad ( MOTOROLA )

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