What is IRF1010NLPBF?


This is Power MOSFET, Transistor.


[PDF] Complete Technical Details can be found in the IRF1010NLPBF datasheet provided at this page.

Summary in PDF File


Advanced Process Technology Ultra Low On Resistance l Dynamic dv dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead Free Description l l IRF1010NSPbF IRF1010NLPbF HEXFET Power MOSFET D PD 95103 VDSS 55V RDS on 11m G S Absolute Maximum Ratings ID TC 25 C ID TC 100 C IDM PD TC 25 C VGS IAR EAR dv dt TJ TSTG The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX 4 It provides the highest power capability and the lowest possible onresistance in any existing surface mount package The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 0W in a typical surface mount application The through hole version IRF1010NL is available for lowprofile applications Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ID 85A IRF1010NSPbF IRF1010NLPbF http

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Manufacturers : International Rectifier

IR - IRF1010NLPBF Datasheet PDF

IR IRF1010NLPBF MOSFET

Power MOSFET, Transistor

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